Description: NESG3031M05 SiGe High Frequency NPN BJT 380 HFe Fmax 110GHz Max Gain @ 5.8GHz. SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification 0.6 dB TYP., 16.0 dB TYP. @ VCE = 6 mA, = 2.4 GHz 0.95 dB TYP., 10.0 dB TYP. @ VCE = 6 mA, = 5.2 GHz 1.1 dB TYP., 9.5 dB TYP. @ VCE = 6 mA, = 5.8 GHz Maximum stable power gain: MSG 14.0 dB TYP. @ VCE = 20 mA, = 5.8 GHz SiGe HBT technology (UHS3) adopted: fmax = 110 GHz Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
Price: 20 USD
Location: Kingman, Kansas
End Time: 2025-01-08T19:08:11.000Z
Shipping Cost: N/A USD
Product Images
Item Specifics
All returns accepted: ReturnsNotAccepted
Brand: cel
Mounting Style: Surface Mount
Type: NPN
Number of Elements per Chip: 1
Number of Pins: 4
Maximum Operating Frequency: 110 GHz
Transistor Category: High Frequency/RF Transistor
